Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction-Reference-Cited by-同舟云学术

Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction

Published:2018-09-07 Issue:10 Volume:18 Page:6340-6346
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Poh Sock Mui¹²^ORCID,Tan Sherman Jun Rong¹²^ORCID,Wang Han³,Song Peng²⁴,Abidi Irfan H.⁵,Zhao Xiaoxu¹²^ORCID,Dan Jiadong¹³,Chen Jingsheng³^ORCID,Luo Zhengtang⁵^ORCID,Pennycook Stephen J.¹³⁴,Castro Neto Antonio H.⁴⁶,Loh Kian Ping²⁴^ORCID

Affiliation:

1. NUS Graduate School for Integrative Sciences and Engineering, Centre for Life Sciences No. 05-01, 28 Medical Drive, 117456 Singapore

2. Department of Chemistry, National University of Singapore, Science Drive 3, 117543 Singapore

3. Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore

4. Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 117546 Singapore

5. Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

6. Department of Physics, National University of Singapore, 3 Science Drive 2, 117542 Singapore

Funder

National Research Foundation Singapore

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b02688

Reference58 articles.

1. Emerging memories: resistive switching mechanisms and current status

2. Ferroelectric tunnel junctions for information storage and processing

3. Critical thickness for ferroelectricity in perovskite ultrathin films

4. Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

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