Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots
Author:
Affiliation:
1. College of Optoelectronic Engineering, Shenzhen University, Nanhai Avenue 3688, Shenzhen, China
2. Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
Funder
Research Grants Council, University Grants Committee
National Natural Science Foundation of China
Shenzhen Science and Technology Innovation Commission
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b02143
Reference39 articles.
1. Atomically ThinMoS2: A New Direct-Gap Semiconductor
2. Optical Spectrum ofMoS2: Many-Body Effects and Diversity of Exciton States
3. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides
4. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
5. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides
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