First Observation of Ferroelectricity in ∼1 nm Ultrathin Semiconducting BaTiO3 Films-Reference-Cited by-同舟云学术

First Observation of Ferroelectricity in ∼1 nm Ultrathin Semiconducting BaTiO3 Films

Published:2019-03-12 Issue:4 Volume:19 Page:2243-2250
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lee Seung Ran¹²,Baasandorj Lkhagvasuren³,Chang Jung Won⁴,Hwang In Woong⁵,Kim Jeong Rae²,Kim Jeong-Gyu,Ko Kyung-Tae,Shim Seung Bo¹,Choi Min Woo⁵,You Mujin⁶,Yang Chan-Ho⁶,Kim Jinhee¹,Song Jonghyun⁵^ORCID

Affiliation:

1. Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea

2. Center for Correlated Electron Systems, Institute for Basic Science (IBS) & Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea

3. University of Science and Technology, Daejeon 34113, Republic of Korea

4. Department of Display and Semiconductor Physics, Korea University, Sejong 30019, Republic of Korea

5. Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea

6. Department of Physics, KAIST, Daejeon 34141, Republic of Korea

Funder

National Research Foundation of Korea

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b04326

Reference40 articles.

1. Elastic strain engineering of ferroic oxides

2. Ferroelectric tunnel junctions for information storage and processing

3. Recent Advances in Functional Testing of Ferroelectric Nanostructures

4. Ferroelectric Random Access Memories

5. Critical thickness for ferroelectricity in perovskite ultrathin films

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