Strain-Engineering of Twist-Angle in Graphene/hBN Superlattice Devices
Author:
Affiliation:
1. Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
2. University of Duhok, Duhok 42001 Kurdistan Region, Iraq
Funder
Engineering and Physical Sciences Research Council
Royal Society
Leverhulme Trust
Newton Fund
Higher Committee for Education Development in Iraq
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b03854
Reference45 articles.
1. Boron nitride substrates for high-quality graphene electronics
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5. Direct Observation of a Gate Tunable Band Gap in Electrical Transport in ABC-Trilayer Graphene
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