Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3-Reference-Cited by-同舟云学术

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Published:2018-08-14 Issue:9 Volume:18 Page:5875-5884
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Jnawali Giriraj¹,Linser Samuel¹,Shojaei Iraj Abbasian¹,Pournia Seyyedesadaf¹,Jackson Howard E.¹,Smith Leigh M.¹,Need Ryan F.²^ORCID,Wilson Stephen D.²

Affiliation:

1. Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221, United States

2. Materials Department, University of California, Santa Barbara, California 93106, United States

Funder

Division of Electrical, Communications and Cyber Systems

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b02577

Reference76 articles.

1. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

2. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

3. Topological insulators and thermoelectric materials

4. Topological Insulators in Three Dimensions

5. A tunable topological insulator in the spin helical Dirac transport regime

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