Characterization of charge-carrier dynamics at the Bi2Se3/MgF2 interface by multiphoton pumped UV–Vis transient absorption spectroscopy

Abstract

Abstract Separate relaxation dynamics of electrons and holes in experiments on optical pumping-probing of semiconductors is rarely observed due to their overlap. Here we report the separate relaxation dynamics of long-lived (∼200 μs) holes observed at room temperature in a 10 nm thick film of the 3D topological insulator (TI) Bi2Se3 coated with a 10 nm thick MgF2 layer using transient absorption spectroscopy in the UV–Vis region. The ultraslow hole dynamics was observed by applying resonant pumping of massless Dirac fermions and bound valence electrons in Bi2Se3 at a certain wavelength sufficient for their multiphoton photoemission and subsequent trapping at the Bi2Se3/MgF2 interface. The emerging deficit of electrons in the film makes it impossible for the remaining holes to recombine, thus causing their ultraslow dynamics measured at a specific probing wavelength. We also found an extremely long rise time (∼600 ps) for this ultraslow optical response, which is due to the large spin–orbit coupling splitting at the valence band maximum and the resulting intervalley scattering between the splitting components. The observed dynamics of long-lived holes is gradually suppressed with decreasing Bi2Se3 film thickness for the 2D TI Bi2Se3 (film thickness below 6 nm) due to the loss of resonance conditions for multiphoton photoemission caused by the gap opening at the Dirac surface state nodes. This behavior indicates that the dynamics of massive Dirac fermions predominantly determines the relaxation of photoexcited carriers for both the 2D topologically nontrivial and 2D topologically trivial insulator phases.