Illumination-Dependent I-V Characteristics of MgF2/Al Multilayered Photodetector

Abstract

The demand for highly efficient and sensitive photodetectors has driven extensive research in the field of optoelectronics. In this study, a novel photodetector utilizing a multilayered structure based on MgF2/Al/Si is presented. The heterostructure device was fabricated using the electron beam deposition technique, and their structural, and electrical properties were thoroughly characterized. The optoelectronic properties were explained based on the thermionic emission (TE) theory under different light intensities. Additionally, a comprehensive study was established to explore the diode electronic parameters, such as the ideality factor (n), potential barrier height (Φ0), and series resistance (Rs), using the methods proposed by Cheung and Nord. The photocurrent shows an increase with higher illumination intensity, indicating efficient generation of electron-hole pairs within the device. Additionally, the photo-transient time measured under an irradiance level of approximately 1000 W m−2 exhibits a fast detection of light. Furthermore, the MgF2 photodetector showed remarkable stability, offering long-term reliability for practical applications. Overall, this research offers valuable perspectives on the potential of MgF2 as a competent substance for the development of highly efficient and sensitive photodetectors for various optoelectronic applications.