Laser Writing of Scalable Single Color Centers in Silicon Carbide-Reference-Cited by-同舟云学术

Laser Writing of Scalable Single Color Centers in Silicon Carbide

Published:2019-03-18 Issue:4 Volume:19 Page:2377-2383
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen Yu-Chen¹^ORCID,Salter Patrick S.²,Niethammer Matthias¹,Widmann Matthias¹,Kaiser Florian¹,Nagy Roland¹,Morioka Naoya¹,Babin Charles¹,Erlekampf Jürgen³,Berwian Patrick³,Booth Martin J.²,Wrachtrup Jörg¹

Affiliation:

1. Third Institute of Physics, University of Stuttgart and Institute for Quantum Science and Technology IQST, Stuttgart 70569, Germany

2. Department of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United Kingdom

3. Fraunhofer IISB, Erlangen D-91058, Germany

Funder

Baden-W?rttemberg Stiftung

Bundesministerium f?r Bildung und Forschung

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.8b05070

Reference33 articles.

1. A silicon carbide room-temperature single-photon source

2. Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

3. Bright room temperature single photon source at telecom range in cubic silicon carbide

4. Bright and photostable single-photon emitter in silicon carbide

5. Bright single photon sources in lateral silicon carbide light emitting diodes

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