Self-Aligned van der Waals Heterojunction Diodes and Transistors
Author:
Affiliation:
1. Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States
Funder
Division of Emerging Frontiers in Research and Innovation
Deutsche Forschungsgemeinschaft
Natural Sciences and Engineering Research Council of Canada
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b05177
Reference40 articles.
1. Insulated gate field effect transistors fabricated using the gate as source-drain mask
2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
3. Van der Waals heterostructures
4. Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene–MoS2 van der Waals Heterojunction
5. MoS 2 transistors with 1-nanometer gate lengths
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