Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS2 van der Waals Heterostructures
Author:
Affiliation:
1. Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland
2. National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
3. National Graphene Institute, University of Manchester, Manchester M13 9PL, United Kingdom
Funder
Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b02186
Reference33 articles.
1. Spins in few-electron quantum dots
2. Quantum computation with quantum dots
3. Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
4. Gate-Defined Confinement in Bilayer Graphene-Hexagonal Boron Nitride Hybrid Devices
5. A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2
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