Tailoring Strain and Morphology of Core–Shell SiGe Nanowires by Low-Temperature Ge Condensation-Reference-Cited by-同舟云学术

Tailoring Strain and Morphology of Core–Shell SiGe Nanowires by Low-Temperature Ge Condensation

Published:2017-11-14 Issue:12 Volume:17 Page:7299-7305
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

David Thomas¹^ORCID,Liu Kailang¹,Ronda Antoine¹,Favre Luc¹,Abbarchi Marco¹,Gailhanou Marc¹,Gentile Pascal²^ORCID,Buttard Denis²,Calvo Vincent²,Amato Michele³^ORCID,Aqua Jean-Noël⁴,Berbezier Isabelle¹

Affiliation:

1. Aix-Marseille Université − CNRS, IM2NP, Faculté des Sciences de Jérôme, F-13397 Marseille France

2. Université Grenoble Alpes, CEA INAC-Pheliqs- SiNaPS, F-38000 Grenoble, France

3. Laboratoire de Physique des Solides and Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, 91405 Orsay, France

4. INSP, Boite 840, 4 pl. Jussieu, 75005 Paris, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b02832

Reference73 articles.

1. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor

2. Role of Confinement on Carrier Transport in Ge–SixGe1–x Core–Shell Nanowires

3. Programmable nanowire circuits for nanoprocessors

4. Diameter-Independent Hole Mobility in Ge/Si Core/Shell Nanowire Field Effect Transistors

5. Realization and Scaling of ${\rm Ge}{\hbox{--}}{\rm Si}_{1{\hbox{-}}{\rm x}}{\rm Ge}_{\rm x}$ Core-Shell Nanowire $n$-FETs

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