Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-Quality Large-Area Two-Dimensional Hexagonal Boron Nitride Layers
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States
Funder
Defense Advanced Research Projects Agency
Basic Energy Sciences
Microelectronics Advanced Research Corporation
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b05179
Reference68 articles.
1. Graphene Analogues of BN: Novel Synthesis and Properties
2. Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
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4. Boron nitride substrates for high-quality graphene electronics
5. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
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