Room-Temperature Mid-Infrared Emission from Faceted InAsSb Multi Quantum Wells Embedded in InAs Nanowires-Reference-Cited by-同舟云学术

Room-Temperature Mid-Infrared Emission from Faceted InAsSb Multi Quantum Wells Embedded in InAs Nanowires

Published:2017-11-30 Issue:1 Volume:18 Page:235-240
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Alhodaib Aiyeshah¹²^ORCID,Noori Yasir J.¹,Carrington Peter J.³,Sanchez Ana M.⁴^ORCID,Thompson Michael D.¹,Young Robert J.¹^ORCID,Krier Anthony¹,Marshall Andrew R. J.¹

Affiliation:

1. Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom

2. Department of Physics, Qassim University, Buryadh 51452, Saudi Arabia

3. Department of Engineering, Lancaster University, Lancaster LA1 4YW, United Kingdom

4. Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

Funder

Royal Academy of Engineering

Defence Science and Technology Laboratory

Qassim University

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b03977

Reference29 articles.

1. III–V semiconductor nanowires for optoelectronic device applications

2. Electron transport in InAs nanowires and heterostructure nanowire devices

3. Solid-state single-photon emitters

4. High Electron Mobility InAs Nanowire Field-Effect Transistors

5. Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors

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