Sub-Poissonian Narrowing of Length Distributions Realized in Ga-Catalyzed GaAs Nanowires-Reference-Cited by-同舟云学术

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Sub-Poissonian Narrowing of Length Distributions Realized in Ga-Catalyzed GaAs Nanowires

Published:2017-08-11 Issue:9 Volume:17 Page:5350-5355
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Koivusalo Eero S.¹^ORCID,Hakkarainen Teemu V.¹^ORCID,Guina Mircea D.¹^ORCID,Dubrovskii Vladimir G.²³⁴^ORCID

Affiliation:

1. Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, FI 33720 Tampere, Finland

2. ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia

3. St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia

4. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg, Russia

Funder

Luonnontieteiden ja Tekniikan Tutkimuksen Toimikunta

Ministry of Education and Science of the Russian Federation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b01766

Reference32 articles.

2. Nucleation Theory and Growth of Nanostructures

3. Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

4. Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy

5. High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

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