Highly Localized Strain in a MoS2/Au Heterostructure Revealed by Tip-Enhanced Raman Spectroscopy-Reference-Cited by-同舟云学术

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Highly Localized Strain in a MoS2/Au Heterostructure Revealed by Tip-Enhanced Raman Spectroscopy

Published:2017-09-25 Issue:10 Volume:17 Page:6027-6033
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Rahaman Mahfujur¹,Rodriguez Raul D.¹²^ORCID,Plechinger Gerd³,Moras Stefan¹,Schüller Christian³,Korn Tobias³,Zahn Dietrich R. T.¹

Affiliation:

1. Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany

2. Tomsk Polytechnic University, 30 Lenin Ave, 634050 Tomsk, Russia

3. Fakultät für Physik, Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b02322

Reference72 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Two-dimensional material nanophotonics

3. Emerging Photoluminescence in Monolayer MoS2

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Why all the fuss about 2D semiconductors?

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