Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions-Reference-Cited by-同舟云学术

Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions

Published:2015-10-29 Issue:11 Volume:15 Page:7329-7333
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chandni U.¹,Watanabe K.²,Taniguchi T.²,Eisenstein J. P.¹

Affiliation:

1. Institute for Quantum Information and Matter, Department of Physics, California Institute of Technology, 1200 East California Boulevard, Pasadena, California 91125, United States

2. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funder

Gordon and Betty Moore Foundation

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b02625

Reference28 articles.

1. Van der Waals heterostructures

2. One-Dimensional Electrical Contact to a Two-Dimensional Material

3. Tunnelling spectroscopy of low-dimensional states

4. Field‐induced resonant tunneling between parallel two‐dimensional electron systems

5. Coulomb barrier to tunneling between parallel two-dimensional electron systems

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