Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires-Reference-Cited by-同舟云学术

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Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires

Published:2015-06-11 Issue:7 Volume:15 Page:4776-4782
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Mankin Max N.,Day Robert W.,Gao Ruixuan,No You-Shin¹,Kim Sun-Kyung,McClelland Arthur A.,Bell David C.,Park Hong-Gyu¹,Lieber Charles M.

Affiliation:

1. Department of Physics, Korea University, Seoul 136-701, Republic of Korea

Funder

National Science Foundation

National Research Foundation of Korea

Division of Materials Research

Hertz Foundation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b01721

Reference49 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. New materials for post-Si computing

3. Nanowire Heterostructures

4. Guided Growth of Epitaxially Coherent GaN Nanowires on SiC

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