Depth Profiling Charge Accumulation from a Ferroelectric into a Doped Mott Insulator

Author:

Marinova Maya1,Rault Julien E.2,Gloter Alexandre1,Nemsak Slavomir345,Palsson Gunnar K.67,Rueff Jean-Pascal2,Fadley Charles S.34,Carrétéro Cécile8,Yamada Hiroyuki89,March Katia1,Garcia Vincent8,Fusil Stéphane8,Barthélémy Agnès8,Stéphan Odile1,Colliex Christian1,Bibes Manuel8

Affiliation:

1. Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud XI, 91405 Orsay, France

2. Synchrotron-SOLEIL, BP 48, Saint-Aubin, F91192 Gif sur Yvette CEDEX, France

3. Department of Physics, University of California Davis, Davis, California 95616, United States

4. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

5. Peter Grünberg Institut PGI-6, Forschungszentrum Jülich, 52425 Jülich, Germany

6. Department of Physics and Astronomy, Uppsala University, Box 516, SE-75120 Uppsala, Sweden

7. Institut Laue-Langevin, 38000 Grenoble, France

8. Unité Mixte de Physique CNRS/Thales,1 Avenue A. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay, France

9. National Institute of Advanced Industrial Science and Technology (AIST), JST, PRESTO, Tsukuba, Ibaraki 305-8562, Japan

Funder

Agence Nationale de la Recherche

European Research Council

Army Research Office

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

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