Ferroelectric synaptic devices based on CMOS-compatible HfAlOxfor neuromorphic and reservoir computing applications
Author:
Affiliation:
1. Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
Abstract
Funder
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR01294H
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