Toward Ferroelectric Control of Monolayer MoS2-Reference-Cited by-同舟云学术

Toward Ferroelectric Control of Monolayer MoS2

Published:2015-04-30 Issue:5 Volume:15 Page:3364-3369
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Nguyen Ariana¹,Sharma Pankaj²,Scott Thomas²,Preciado Edwin¹,Klee Velveth¹,Sun Dezheng³,Lu I-Hsi (Daniel)¹,Barroso David¹,Kim SukHyun³,Shur Vladimir Ya.⁴,Akhmatkhanov Andrey R.⁴,Gruverman Alexei²,Bartels Ludwig¹,Dowben Peter A.²

Affiliation:

1. Chemistry and Materials Science and Engineering Program, University of California, Riverside, California 92521, United States

2. Department of Physics and Astronomy, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, United States

3. Columbia University, 3000 Broadway, New York, New York 10027-6941, United States

4. Institute of Natural Sciences, Ural Federal University, Ekaterinburg, 620000, Russia

Funder

Defense Advanced Research Projects Agency

Microelectronics Advanced Research Corporation

Semiconductor Research Corporation

Ministry of Education and Science of the Russian Federation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00687

Reference55 articles.

1. Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers

2. MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

3. Control of Schottky Barriers in Single Layer MoS2 Transistors with Ferromagnetic Contacts

4. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

5. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

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