Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier-Reference-Cited by-同舟云学术

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Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

Published:2015-09-02 Issue:10 Volume:15 Page:6809-6814
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ahn Chiyui,Fong Scott W.,Kim Yongsung¹,Lee Seunghyun,Sood Aditya,Neumann Christopher M.,Asheghi Mehdi,Goodson Kenneth E.,Pop Eric,Wong H.-S. Philip

Affiliation:

1. Samsung Advanced Institute of Technology (SAIT), Suwon, 443-803, South Korea

Funder

Microelectronics Advanced Research Corporation

Intelligence Advanced Research Projects Activity Trusted Integrated Circuits

U.S. Department of Defense

Stanford Non-Volatile Memory Technology Research Initiative affiliate program

Samsung

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b02661

Reference41 articles.

1. Phase Change Memory

2. Phase change memory technology

3. Ultrafast Characterization of Phase-Change Material Crystallization Properties in the Melt-Quenched Amorphous Phase

4. PRAM cell technology and characterization in 20nm node size

5. A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth

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