WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature-Reference-Cited by-同舟云学术

WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature

Published:2015-11-16 Issue:12 Volume:15 Page:8223-8228
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Withers F.¹²,Del Pozo-Zamudio O.³,Schwarz S.³,Dufferwiel S.³,Walker P. M.³,Godde T.³,Rooney A. P.⁴,Gholinia A.⁴,Woods C. R.¹,Blake P.¹²,Haigh S. J.⁴,Watanabe K.⁵,Taniguchi T.⁵,Aleiner I. L.²⁶,Geim A. K.¹,Fal’ko V. I.¹²,Tartakovskii A. I.³,Novoselov K. S.¹²

Affiliation:

1. School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, U.K.

2. National Graphene Institute, University of Manchester, Oxford Road, Manchester, M13 9PL, U.K.

3. School of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, U.K.

4. School of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL, U.K.

5. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

6. Physics Department, Columbia University, New York, New York 10027, United States

Funder

Leverhulme Trust

Royal Society

European Science Foundation

Office of Naval Research

Engineering and Physical Sciences Research Council

Defense Threat Reduction Agency

Consejo Nacional de Ciencia y Tecnología

European Research Council

Royal Academy of Engineering

Seventh Framework Programme

U.S. Army

Secretaría de Educación Pública

Air Force Office of Scientific Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03740

Reference44 articles.

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5. Spin and pseudospins in layered transition metal dichalcogenides

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