Superlinear Composition-Dependent Photocurrent in CVD-Grown Monolayer MoS2(1–x)Se2x Alloy Devices
Author:
Affiliation:
1. Materials Science & Engineering Program and Departments of Chemistry and Mechanical Engineering, University of California, Riverside, California 92521, United States
2. Sandia National Laboratories, Livermore, California 94551, United States
Funder
National Science Foundation
DOE
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00190
Reference29 articles.
1. Atomically ThinMoS2: A New Direct-Gap Semiconductor
2. Emerging Photoluminescence in Monolayer MoS2
3. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
4. Facile growth of monolayer MoS2 film areas on SiO2
5. 2-Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1-x)Se2xMonolayers
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