Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core–Shell Nanowire Transistors-Reference-Cited by-同舟云学术

Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core–Shell Nanowire Transistors

Published:2015-05-01 Issue:5 Volume:15 Page:3295-3302
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Morkötter S.¹,Jeon N.²,Rudolph D.¹,Loitsch B.¹,Spirkoska D.¹,Hoffmann E.¹³,Döblinger M.⁴,Matich S.¹,Finley J. J.¹,Lauhon L. J.²,Abstreiter G.¹³,Koblmüller G.¹

Affiliation:

1. Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany

2. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201, United States

3. Institute for Advanced Study, Technische Universität München, Garching 85748, Germany

4. Department of Chemistry, Ludwig-Maximilians-Universität München, Munich 81377, Germany

Funder

Division of Materials Research

German Academic Exchange Service

Deutsche Forschungsgemeinschaft

Seventh Framework Programme

Institute for Advanced Study, Technische Universität München

Publisher

American Chemical Society (ACS)

Subject