Electrically Tunable Bandgaps in Bilayer MoS2
Author:
Affiliation:
1. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
2. Globalfoundries Advanced Technology, Hopewell Junction, New York 12533, United States
Funder
Defense Advanced Research Projects Agency
Microelectronics Advanced Research Corporation
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03218
Reference33 articles.
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3. Bandgap engineering of semiconductor heterostructures by molecular beam epitaxy: physics and applications
4. Electric Field Effect in Atomically Thin Carbon Films
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