Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients-Reference-Cited by-同舟云学术

Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

Published:2015-05-12 Issue:6 Volume:15 Page:3709-3715
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Huh Junghwan¹,Yun Hoyeol²,Kim Dong-Chul¹³,Munshi A. Mazid¹³,Dheeraj Dasa L.¹³,Kauko Hanne⁴,van Helvoort Antonius T. J.⁴,Lee SangWook²,Fimland Bjørn-Ove¹,Weman Helge¹

Affiliation:

1. Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway

2. School of Physics, Konkuk University, Seoul 143-701, Korea

3. CrayoNano AS, Otto Nielsens vei 12, NO-7052, Trondheim, Norway

4. Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491, Trondheim, Norway

Funder

Norges Forskningsråd

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b00089

Reference44 articles.

1. Programmable nanowire circuits for nanoprocessors

2. Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

3. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

4. Encoding Electronic Properties by Synthesis of Axial Modulation-Doped Silicon Nanowires

5. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

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