Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor
Author:
Affiliation:
1. Viterbi Faculty of Electrical and Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
2. GlobalFoundries Fab1 LLC & Co. KG, 01109 Dresden, Germany
Funder
Bundesministerium f?r Wirtschaft und Energie
Freistaat Sachsen
Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c04706
Reference32 articles.
1. Ferroelectricity in hafnium oxide thin films
2. A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
3. A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
4. Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices
5. Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
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