Terahertz Photoconductivity in Bilayer Graphene Transistors: Evidence for Tunneling at Gate-Induced Junctions-Reference-Cited by-同舟云学术

Terahertz Photoconductivity in Bilayer Graphene Transistors: Evidence for Tunneling at Gate-Induced Junctions

Published:2022-12-22 Issue:1 Volume:23 Page:220-226
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Mylnikov Dmitry A.¹^ORCID,Titova Elena I.¹²^ORCID,Kashchenko Mikhail A.¹²^ORCID,Safonov Ilya V.¹²^ORCID,Zhukov Sergey S.¹,Semkin Valentin A.¹^ORCID,Novoselov Kostya S.²³,Bandurin Denis A.⁴,Svintsov Dmitry A.¹^ORCID

Affiliation:

1. Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, Russia

2. Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow121205, Russia

3. Institute for Functional Intelligent Materials, National University of Singapore, Singapore117575, Singapore

4. Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore

Funder

Russian Science Foundation

Ministry of Science and Higher Education of the Russian Federation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c04119

Reference44 articles.

1. Transparent conducting oxides for electro-optical plasmonic modulators

2. Review and perspective on ultrafast wavelength-size electro-optic modulators

3. Electro-optical switching of graphene oxide liquid crystals with an extremely large Kerr coefficient

4. Electro-optical switching by liquid-crystal controlled metasurfaces

5. An ultrasensitive molybdenum-based double-heterojunction phototransistor

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