Strong Zero-Phonon Transition from Point Defect-Stacking Fault Complexes in Silicon Carbide Nanowires-Reference-Cited by-同舟云学术

Strong Zero-Phonon Transition from Point Defect-Stacking Fault Complexes in Silicon Carbide Nanowires

Author:

Lee Jin Hee¹,Jeon Woong Bae¹,Moon Jong Sung¹,Lee Junghyun²,Han Sang-Wook²,Bodrog Zoltán³,Gali Adam³⁴^ORCID,Lee Sang-Yun²⁵^ORCID,Kim Je-Hyung¹^ORCID

Affiliation:

1. Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

2. Center for Quantum Information, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

3. Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary

4. Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8., H-1111 Budapest, Hungary

5. Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea

Funder

National Research Foundation of Korea

European Commission

Korea Institute of Science and Technology

Nemzeti Kutat??si Fejleszt??si ??s Innov??ci??s Hivatal

Institute of Information and Communications Technology Planning and Evaluation

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

Reference58 articles.

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