Flexible SnO Optoelectronic Memory Based on Light-Dependent Ionic Migration in Ruddlesden–Popper Perovskite-Reference-Cited by-同舟云学术

Flexible SnO Optoelectronic Memory Based on Light-Dependent Ionic Migration in Ruddlesden–Popper Perovskite

Published:2021-12-29 Issue:1 Volume:22 Page:494-500
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tian Qianlei¹,Hong Ruohao¹,Liu Chang¹,Hong Xitong¹,Zhang Sen¹,Wang Liming¹,Lv Yawei¹,Liu Xingqiang¹^ORCID,Zou Xuming¹,Liao Lei²^ORCID

Affiliation:

1. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China

2. State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of?Hunan Province

National Natural Science Foundation of China

Hunan Province

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.1c04402

Reference39 articles.