Polarization‐Resolved Broadband MoS 2 /Black Phosphorus/MoS 2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio-Reference-Cited by-同舟云学术

Polarization‐Resolved Broadband MoS 2 /Black Phosphorus/MoS 2 Optoelectronic Memory with Ultralong Retention Time and Ultrahigh Switching Ratio

Published:2021-03-31 Issue:23 Volume:31 Page:2100781
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Liu Chang¹,Zou Xuming¹,Wu Min‐Ci²,Wang Yang³,Lv Yawei¹,Duan Xinpei¹,Zhang Sen¹,Liu Xingqiang¹,Wu Wen‐Wei²,Hu Weida²,Fan Zhiyong⁴,Liao Lei¹^ORCID

Affiliation:

1. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha 410082 China

2. Department of Materials Science and Engineering National Chiao Tung University Hsinchu 300 Taiwan

3. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

4. Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong SAR China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202100781

Reference38 articles.

1. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

2. Two-dimensional multibit optoelectronic memory with broadband spectrum distinction

3. Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures

4. Lateral bipolar photoresistance effect in the CIGS heterojunction and its application in position sensitive detector and memory device

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