Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping-Reference-Cited by-同舟云学术

Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping

Author:

Ngo Tien Dat¹,Huynh Tuyen¹,Moon Inyong²,Taniguchi Takashi³^ORCID,Watanabe Kenji⁴^ORCID,Choi Min Sup⁵^ORCID,Yoo Won Jong¹^ORCID

Affiliation:

1. SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea

2. Quantum Information Research Support Center, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea

3. International Centrer for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki 305-0044, Japan

4. Research Center for Functional Materials, National Institute for Materials Science, Ibaraki 305-0044, Japan

5. Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Chungnam National University

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

Reference35 articles.

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