Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors-Reference-Cited by-同舟云学术

Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors

Author:

Arnold Andrew J.¹^ORCID,Schulman Daniel S.²^ORCID,Das Saptarshi²³⁴^ORCID

Affiliation:

1. Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States

2. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States

3. Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States

4. Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States

Funder

Air Force Office of Scientific Research

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference78 articles.

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