Overbias Photon Emission from Light-Emitting Devices Based on Monolayer Transition Metal Dichalcogenides-Reference-Cited by-同舟云学术

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Overbias Photon Emission from Light-Emitting Devices Based on Monolayer Transition Metal Dichalcogenides

Published:2023-12-04 Issue:23 Volume:23 Page:10908-10913
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Shan Shengyu¹^ORCID,Huang Jing¹^ORCID,Papadopoulos Sotirios¹^ORCID,Khelifa Ronja¹^ORCID,Taniguchi Takashi²^ORCID,Watanabe Kenji³^ORCID,Wang Lujun¹,Novotny Lukas¹^ORCID

Affiliation:

1. Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland

2. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

3. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funder

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c03155

Reference46 articles.

1. Light-emitting diodes by band-structure engineering in van der Waals heterostructures

2. WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature

3. Nanocavity Integrated van der Waals Heterostructure Light-Emitting Tunneling Diode

4. Electrically pumped WSe2-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities

5. Single Defect Light-Emitting Diode in a van der Waals Heterostructure

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