Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material-Reference-Cited by-同舟云学术

Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower-to-Higher Bandgap 2D Material

Published:2023-06-08 Issue:12 Volume:23 Page:5617-5624
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Karmakar Arka¹^ORCID,Kazimierczuk Tomasz¹^ORCID,Antoniazzi Igor¹,Raczyński Mateusz¹^ORCID,Park Suji²^ORCID,Jang Houk²,Taniguchi Takashi³^ORCID,Watanabe Kenji⁴^ORCID,Babiński Adam¹,Al-Mahboob Abdullah²,Molas Maciej R.¹^ORCID

Affiliation:

1. Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland

2. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA

3. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

4. Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funder

Narodowe Centrum Nauki

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c01127

Reference58 articles.

1. Band Structures of Transition-Metal-Dichalcogenide Layer Compounds

2. Emerging Photoluminescence in Monolayer MoS2

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Direct Measurement of the Thickness-Dependent Electronic Band Structure ofMoS2Using Angle-Resolved Photoemission Spectroscopy

5. Layer-dependent electronic structure of an atomically heavy two-dimensional dichalcogenide

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