Layer-dependent electronic structure of an atomically heavy two-dimensional dichalcogenide-Reference-Cited by-同舟云学术

Layer-dependent electronic structure of an atomically heavy two-dimensional dichalcogenide

Published:2015-01-20 Issue:4 Volume:91 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Yeh Po-Chun,Jin Wencan,Zaki Nader,Zhang Datong,Liou Jonathan T.,Sadowski Jerzy T.,Al-Mahboob Abdullah,Dadap Jerry I.,Herman Irving P.,Sutter Peter,Osgood Richard M.

Funder

U.S. Department of Energy

Office of Science

Basic Energy Sciences

New York State Foundation for Science, Technology and Innovation

New York State Energy Research and Development Authority

Brookhaven National Laboratory, Office of Science

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.91.041407/fulltext

Reference49 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

4. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

5. Optical properties of mixed transition metal dichalcogenide crystals

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