Nanoscale Structure of Si/SiO2/Organics Interfaces-Reference-Cited by-同舟云学术

Nanoscale Structure of Si/SiO2/Organics Interfaces

Published:2014-11-21 Issue:12 Volume:8 Page:12676-12681
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Steinrück Hans-Georg¹,Schiener Andreas¹,Schindler Torben¹,Will Johannes¹,Magerl Andreas¹,Konovalov Oleg²,Li Destri Giovanni²,Seeck Oliver H.³,Mezger Markus⁴,Haddad Julia⁵,Deutsch Moshe⁵,Checco Antonio⁶,Ocko Benjamin M.⁶

Affiliation:

1. Crystallography and Structural Physics, University of Erlangen-Nürnberg, 91058 Erlangen, Germany

2. ESRF, 6 Rue Jules Horowitz, B.P. 220, 38043 Grenoble Cedex, France

3. HASYLAB am DESY, Notkestrasse 85, 22607 Hamburg, Germany

4. Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany

5. Physics Department, and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel

6. Condensed Matter Physics & Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States

Funder

Basic Energy Sciences

United States - Israel Binational Science Foundation

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn5056223

Reference44 articles.

1. The Potential of Molecular Self-Assembled Monolayers in Organic Electronic Devices

2. Low-Voltage Self-Assembled Monolayer Field-Effect Transistors on Flexible Substrates

3. Bottom-up organic integrated circuits

4. Highly oriented crystals at the buried interface in polythiophene thin-film transistors

5. Biosensing with plasmonic nanosensors

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