Composition-Dependent Structural and Electronic Properties of α-(Si1−xCx)3N4-Reference-Cited by-同舟云学术

Composition-Dependent Structural and Electronic Properties of α-(Si1−xCx)3N4

Published:2011-01-05 Issue:5 Volume:115 Page:2448-2453
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Xu M.¹,Xu S.²,Duan M. Y.¹,Delanty M.³⁴,Jiang N.²,Li H. S.²,Kwek L. C.⁵,Ostrikov K.³

Affiliation:

1. Key Lab of Information Materials of Sichuan Province & School of Electrical and Information Engineering, South-west University for Nationalities, Chengdu 610041, and International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110016, P. R. China

2. Plasma Sources and Applications Center, NIE and Institute of Advanced Studies, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616

3. CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, New South Wales 2070, Australia

4. Centre for Quantum Information Science and Security, Macquarie University, New South Wales 2109, Australia

5. NIE and Institute of Advanced Studies, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp110109x

Reference46 articles.

1. Strong piezoelectricity in nanosized silicon nitride prepared by laser‐induced chemical vapor deposition

2. Effect of DC bias on microstructural rearrangement of a-SiN:H films on PET substrate

3. Silicon Nitride/Silicon Carbide Nanocomposite Materials: I, Fabrication and Mechanical Properties at Room Temperature

4. CMOS-compatible multiple-wavelength oscillator for on-chip optical interconnects

5. Temperature-Dependent Properties of nc-Si Thin Films Synthesized in Low-Pressure, Thermally Nonequilibrium, High-Density Inductively Coupled Plasmas

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