Temperature-Dependent Properties of nc-Si Thin Films Synthesized in Low-Pressure, Thermally Nonequilibrium, High-Density Inductively Coupled Plasmas-Reference-Cited by-同舟云学术

Temperature-Dependent Properties of nc-Si Thin Films Synthesized in Low-Pressure, Thermally Nonequilibrium, High-Density Inductively Coupled Plasmas

Published:2009-07-02 Issue:33 Volume:113 Page:14759-14764
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Cheng Qijin¹,Xu Shuyan¹,Ostrikov Kostya (Ken)¹

Affiliation:

1. Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, New South Wales 2070, Australia, Plasma Sources and Applications Centre, NIE, Nanyang Technological University, 1 Nanyang Walk, 637616, Singapore, and School of Physics, The University of Sydney, Sydney NSW 2006, Australia

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp9047083

Reference49 articles.

1. Mechanism of hydrogen-induced crystallization of amorphous silicon

2. Nanopowder management and control of plasma parameters in electronegative SiH4 plasmas

3. Charged clusters in thin film growth

4. A Comparison of Porous Silicon and Silicon Nanocrystallite Photoluminescence Quenching with Amines

5. A Method for the Rapid Synthesis of Large Quantities of Metal Oxide Nanowires at Low Temperatures

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