Crystal-Face Dependences of Surface Band Edges and Hole Reactivity, Revealed by Preparation of Essentially Atomically Smooth and Stable (110) and (100) n-TiO2 (Rutile) Surfaces-Reference-Cited by-同舟云学术

Crystal-Face Dependences of Surface Band Edges and Hole Reactivity, Revealed by Preparation of Essentially Atomically Smooth and Stable (110) and (100) n-TiO2 (Rutile) Surfaces

Published:2005-01-15 Issue:5 Volume:109 Page:1648-1651
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Nakamura Ryuhei¹,Ohashi Naomichi¹,Imanishi Akihito¹,Osawa Takeo¹,Matsumoto Yuji¹,Koinuma Hideomi¹,Nakato Yoshihiro¹

Affiliation:

1. Division of Chemistry, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan, Materials and Structures Laboratory, Tokyo Institute of Technology, Nagastuta Midori-ku, Yokohama 226-8503, Japan, and CREST, JST

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp044710t

Reference32 articles.

1. Electrochemical Photolysis of Water at a Semiconductor Electrode

2. Photodecomposition of water over Pt/TiO2 catalysts

3. Direct splitting of water under visible light irradiation with an oxide semiconductor photocatalyst

4. Photocatalysis on TiO2 Surfaces: Principles, Mechanisms, and Selected Results

5. Environmental Applications of Semiconductor Photocatalysis

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