Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes-Reference-Cited by-同舟云学术

Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes

Published:2012-02-10 Issue:3 Volume:12 Page:1235-1240
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Park Woon Ik¹,Yoon Jong Moon¹,Park Moonkyu¹,Lee Jinsup¹,Kim Sung Kyu¹,Jeong Jae Won¹,Kim Kyungho¹,Jeong Hu Young¹,Jeon Seokwoo¹,No Kwang Soo¹,Lee Jeong Yong¹,Jung Yeon Sik¹

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl203597d

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5. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

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