Nondestructive in Situ Characterization of Molecular Structures at the Surface and Buried Interface of Silicon-Supported Low-k Dielectric Films-Reference-Cited by-同舟云学术

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Nondestructive in Situ Characterization of Molecular Structures at the Surface and Buried Interface of Silicon-Supported Low-k Dielectric Films

Published:2015-01-21 Issue:4 Volume:119 Page:1736-1746
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Myers John N.¹,Zhang Xiaoxian¹,Bielefeld Jeff²,Lin Qinghuang³,Chen Zhan¹

Affiliation:

1. Department of Chemistry, University of Michigan, 930 North University Avenue, Ann Arbor, Michigan 48109, United States

2. Intel Corporation, Hillsboro, Oregon 97124, United States

3. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, United States

Funder

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp510205u

Reference87 articles.

1. Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art

2. Dielectric Films for Advanced Microelectronics

3. Porous pSiCOH Ultralow-k Dielectrics for Chip Interconnects Prepared by PECVD

4. Integration Challenges of Nanoporous Low Dielectric Constant Materials

5. Elastic properties of porous low-k dielectric nano-films

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