Resolving Interface Barrier Deviation from the Schottky–Mott Rule: A Mitigation Strategy via Engineering MoS<sub>2</sub>–Metal van der Waals Contact-Reference-Cited by-同舟云学术

Resolving Interface Barrier Deviation from the Schottky–Mott Rule: A Mitigation Strategy via Engineering MoS₂–Metal van der Waals Contact

Published:2023-03-17 Issue:12 Volume:14 Page:2940-2949
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Li Zhongjun¹²^ORCID,Zheng Yahui¹,Li Guojun¹,Wang Hanxi¹,Zhu Weiduo¹,Wang Haidi¹^ORCID,Chen Zhao¹^ORCID,Yuan Yupeng³,Zeng Xiao Cheng⁴⁵^ORCID,Wu Yucheng¹^ORCID

Affiliation:

1. School of Physics, Hefei University of Technology, Hefei 230009, Anhui, China

2. State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, China

3. School of Materials Science and Engineering, Anhui University, Hefei 2300601, Anhui, China

4. Department of Materials Science & Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong, China

5. Department of Chemistry, University of Nebraska─Lincoln, Lincoln, Nebraska 68588, United States

Funder

University of Science and Technology of China

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Anhui Provincial Key Research and Development Plan

State Key Laboratory of Quantum Optics and Quantum Optics Devices

National College Student Innovation and Entrepreneurship Training Program

SCCAS, Tianjin

Shanghai Super Computer Centers

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.3c00056

Reference53 articles.

1. Few-Layer MoS2: A Promising Layered Semiconductor

2. 2D materials and van der Waals heterostructures

3. Disorder in van der Waals heterostructures of 2D materials

4. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

5. Ultralow contact resistance between semimetal and monolayer semiconductors

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