Study of Optoelectronic Features in Polar and Nonpolar Polymorphs of the Oxynitride Tin-Based Semiconductor InSnO<sub>2</sub>N-Reference-Cited by-同舟云学术

Study of Optoelectronic Features in Polar and Nonpolar Polymorphs of the Oxynitride Tin-Based Semiconductor InSnO₂N

Author:

Palummo Maurizia¹^ORCID,Re Fiorentin Michele²^ORCID,Yamashita Koichi³^ORCID,Castelli Ivano E.⁴^ORCID,Giorgi Giacomo⁵⁶⁷^ORCID

Affiliation:

1. Department of Physics & INFN, Universitá di Roma “Tor Vergata,” Via della Ricerca Scientifica 1, 00133 Roma, Italy

2. Department of Applied Science and Technology, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy

3. Graduate School of Nanobioscience, Yokohama City University, Yokohama 236-0027, Japan

4. Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark

5. Department of Civil & Environmental Engineering (DICA), The University of Perugia, Via G. Duranti 93, 06125 Perugia, Italy

6. CIRIAF - Interuniversity Research Centre, University of Perugia, Via G. Duranti 93, 06125 Perugia, Italy

7. CNR-SCITEC, 06123 Perugia, Italy

Funder

New Energy and Industrial Technology Development Organization

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

Reference70 articles.

2. NREL, Best research-cell efficiencies; https://www.nrel.gov/pv/cell-efficiency.html (last access Jan 2023).

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