Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction-Reference-Cited by-同舟云学术

Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction

Published:2021-01-26 Issue:4 Volume:12 Page:1262-1267
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Galbiati Miriam¹,Persichetti Luca²^ORCID,Gori Paola³,Pulci Olivia⁴⁵^ORCID,Bianchi Marco⁶,Di Gaspare Luciana²^ORCID,Tersoff Jerry⁷,Coletti Camilla⁸⁹^ORCID,Hofmann Philip⁶^ORCID,De Seta Monica²^ORCID,Camilli Luca¹⁴^ORCID

Affiliation:

1. Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark

2. Department of Sciences, Roma Tre University, 00146 Rome, Italy

3. Department of Engineering, Roma Tre University, 00146 Rome, Italy

4. Department of Physics, University of Rome “Tor Vergata”, 00133 Rome, Italy

5. Istituto Nazionale di Fisica Nucleare, Roma 2, 00133 Rome, Italy

6. Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark

7. IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York, New York 10598, United States

8. Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Pisa 56127, Italy

9. Graphene Laboratories, Istituto Italiano di Tecnologia, Genova 16163, Italy

Funder

European Commission

H2020 Marie Sklodowska-Curie Actions

Villum Fonden

Ministero dell'Istruzione, dell'Universit? e della Ricerca

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.0c03649

Reference35 articles.

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