A Universal Fe/N Incorporated Graphdiyne for Printing Flexible Ferromagnetic Semiconducting Electronics-Reference-Cited by-同舟云学术

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A Universal Fe/N Incorporated Graphdiyne for Printing Flexible Ferromagnetic Semiconducting Electronics

Published:2020-12-16 Issue:1 Volume:12 Page:204-210
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Li Ru¹,Li Xiaodong¹,Zhang Mingjia¹,Li Yuan¹,Yang Ze¹,Huang Changshui¹²^ORCID

Affiliation:

1. Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P. R. China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Institute Research Project

Taishan Scholars Program of Shandong Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.0c03309

Reference54 articles.

1. Ferromagnetism in magic-angle graphene

2. Magnetism in two-dimensional materials beyond graphene

3. Graphene spintronics

4. Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid

5. Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoO x /Pt Contact Media for Indium-Tin-Oxide Source/Drain

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