Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid-Reference-Cited by-同舟云学术

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Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid

Published:2018-06-21 Issue:3 Volume:5 Page:035039
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Zhang Mingjia,Wang Xiaoxiong,Sun Huijuan,Yu Jiaojiao,Wang Ning,Long Yunze^ORCID,Huang Changshui^ORCID

Funder

The National Natural Science Foundation of China

The Hundred Talents Program and Frontier Science Research Project (QYZDB-SSW-JSC052) of the Chinese Academy of Sciences

The Shandong Provincial Natural Science Foundation, China

The Natural Science Foundation of Shandong Province (China) for Distinguished Young Scholars

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aacba5/pdf

Reference35 articles.

1. Graphene spintronics

2. Long distance spin communication in chemical vapour deposited graphene

3. Long Spin Diffusion Length in Few-Layer Graphene Flakes

4. Spintronics and pseudospintronics in graphene and topological insulators

5. Sulfur Doping Induces Strong Ferromagnetic Ordering in Graphene: Effect of Concentration and Substitution Mechanism

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3. Ferromagnetism in Ni quantum dots anchored graphdiyne;Applied Physics Letters;2023-09-11

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