Dimensionality-Reduced Fermi Level Pinning in Coplanar 2D Heterojunctions-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Dimensionality-Reduced Fermi Level Pinning in Coplanar 2D Heterojunctions

Published:2021-04-29 Issue:17 Volume:12 Page:4299-4305
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Yu Henry¹²^ORCID,Gupta Sunny²^ORCID,Kutana Alex²^ORCID,Yakobson Boris I.¹²³^ORCID

Affiliation:

1. Applied Physics Program, Rice University, Houston, Texas 77005, United States

2. Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States

3. Department of Chemistry, Rice University, Houston, Texas 77005, United States

Funder

Office of Naval Research

U.S. Department of Defense

Office of Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.0c03663

Reference46 articles.

1. The physics and chemistry of the Schottky barrier height

2. Determination of the Fermi-level pinning position at Si(111) surfaces

3. Chemical Bonding and Fermi Level Pinning at Metal-Semiconductor Interfaces

4. Recent advances in Schottky barrier concepts

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer‐scale single‐crystal two‐dimensional materials for integrated optoelectronics;InfoScience;2024-08-27

2. Electronic Band Offset in a Diamond|cBN|Diamond System for Modulation Doping;Advanced Functional Materials;2024-07-31

3. Fermi level tuning in Sn1-xPbxTe/Pb heterostructure via changing interface roughness;Science China Physics, Mechanics & Astronomy;2024-07-16

4. Defected BN Substrate Induces the Transition from Schottky to Ohmic Contact in Two-Dimensional Metals–Semiconductor Junctions;ACS Materials Letters;2024-04-30

5. An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions;ACS Applied Materials & Interfaces;2024-04-22

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3