Ultrafast Hot Carrier Injection in Au/GaN: The Role of Band Bending and the Interface Band Structure-Reference-Cited by-同舟云学术

Ultrafast Hot Carrier Injection in Au/GaN: The Role of Band Bending and the Interface Band Structure

Published:2019-09-20 Issue:20 Volume:10 Page:6174-6183
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Zheng Fan¹^ORCID,Wang Lin-Wang¹

Affiliation:

1. Joint Center for Artificial Photosynthesis and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Funder

Office of Science

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.9b02402

Reference65 articles.

1. Hot Electrons Do the Impossible: Plasmon-Induced Dissociation of H2 on Au

2. The case for plasmon-derived hot carrier devices

3. Plasmon-induced hot-electron generation at nanoparticle/metal-oxide interfaces for photovoltaic and photocatalytic devices

4. Hot Charge Carrier Transmission from Plasmonic Nanostructures

5. Interplay between plasmon and single-particle excitations in a metal nanocluster

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