Nonvolatile Balanced Ternary Memory Based on The Multiferroelectric Material GeSnTe2-Reference-Cited by-同舟云学术

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Nonvolatile Balanced Ternary Memory Based on The Multiferroelectric Material GeSnTe2

Published:2019-11-18 Issue:23 Volume:10 Page:7470-7474
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Nam Jisoo¹,Lee Hosik¹^ORCID,Lee Minseong¹,Lee Jun Hee¹

Affiliation:

1. School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea

Funder

Ulsan National Institute of Science and Technology

Ministry of Trade, Industry and Energy

National Research Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.9b02956

Reference36 articles.

1. Bailey, B. The impact of Moore’s law ending. https://semiengineering.com/the-impact-of-moores-law-ending/ (October 29, 2018).

2. Multiple-Valued Logic—its Status and its Future

3. A multiplier chip with multiple-valued bidirectional current-mode logic circuits

4. Can Ternary Computing Improve Information Assurance?

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4. Repair Effect of Nanomaterials on Meniscus Injury Induced by Calisthenics Exercise;Journal of Nanomaterials;2022-05-21

5. Intertwined ferroelectricity and topological state in two-dimensional multilayer;npj Computational Materials;2021-10-20

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